Dry Etching

Inductively Coupled Plasma Reactive-Ion Etching (ICP-RIE)

• High selectivity

• High Etch rate

• Low damage

• High-aspect structures with vertical profiles

• Smooth sidewall nanopattern etching

• PZT etching

• Applications

  • GaAs, AlGaAs, InP, GaN, InGaAs (compound Semiconductors) for VCSEL, LED, optoelectronics, lasers

  • quartz, oxide etching for optical waveguides

  • SiC etching for power devices

  • Metals electrodes Pt, Al, Au etching

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RIE (Reactive Ion Etching)

• Isotropic/ Anisotropic Dry etching

• Slow etch rate

• Sacrificial etching of Si, Oxides

• Cr hard masks

• Applications:

  • etching of thin films of

    • metals (Au, Al Ti, Pt, etc.)

    • dielectrics (SiO2, SiN)

    • Silicon-based Si, polysilicon, amorphous Si

    • DLC (Diamond-like carbon etching)

  • Photoresist, NIL resist etching, stripping, ashing, descuming, plasma ashing

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DRIE (Deep Reactive Ion Etching)

• 35:1 aspect ratio etching

• High-rate dry etching of Silicon with the Bosch Process

• Sidewall angle close to 90°

• SiO2 masks

• Suitable for TSV (Through-Silicon-Via)